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P2N2222AZL1G - onsemi

Description: Bipolar Transistors - BJT 600mA 75V NPN

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P2N2222AZL1G - onsemi - PCB symbol
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PCB Footprints
P2N2222AZL1G - onsemi PCB footprint - Other - Other - TO−92 (TO−226AA) CASE 029−11 ISSUE AL
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P2N2222AZL1G - onsemi - 3D model - Other - TO−92 (TO−226AA) CASE 029−11 ISSUE AL
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P2N2222AZL1G Details

  • Manufacturer Part Number:

    P2N2222AZL1G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    LEAD FREE, CASE 29-11, TO-226AA, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    EUROPEAN PART NUMBER

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    75

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.625 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    300 MHz

  • Turn-off Time-Max (toff):

    285 ns

  • Turn-on Time-Max (ton):

    35 ns

P2N2222AZL1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for P2N2222AZL1G is -55°C to 150°C, but it can be derated for higher temperatures. Consult the datasheet for specific derating curves.
  • To ensure stability, use a resistor-capacitor (RC) network in the base circuit to prevent oscillations. A 1 kΩ resistor and a 10 nF capacitor are typical values. Additionally, use a low-inductance layout and minimize lead lengths.
  • The maximum collector-emitter voltage (Vceo) for P2N2222AZL1G is 40 V. However, the maximum collector-emitter voltage with a base-emitter voltage (Vbe) of 5 V is 30 V. Consult the datasheet for specific voltage ratings.
  • While P2N2222AZL1G can handle high currents, it's not recommended for high-current switching applications due to its limited power dissipation capability. Consider using a more suitable transistor or a dedicated switch IC for high-current applications.
  • The base resistor value depends on the application and the required base current. A general rule of thumb is to choose a base resistor that limits the base current to 1/10th of the collector current. Consult the datasheet and application notes for specific guidance.

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P2N2222AZL1G Overview

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P2N2222AZL1G Alternates

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Part Image KSP2222ATF Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image KSP2222A Samsung Semiconductor

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image KSP2222ATA_NL Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image KSP2222A Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image KSP2222ATF onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
For a full list of alternate parts for P2N2222AZL1G, check out Findchips.com