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PHD3055E,118 - Nexperia

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PHD3055E,118 Details

  • Manufacturer Part Number:

    PHD3055E,118

  • Brand Name:

    Nexperia

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK

  • Package Description:

    SMALL OUTLINE, R-PSSO-G2

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT428

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    10.3 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    41 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PHD3055E,118 Frequently Asked Questions (FAQs)

  • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow NXP's recommended thermal design guidelines, including proper heat sinking, thermal interface materials, and PCB layout. Additionally, consider using thermal simulation tools to analyze the design and identify potential hotspots.
  • The internal voltage regulator is designed to provide a stable voltage supply to the internal circuitry. However, it has limitations in terms of output current and voltage accuracy. If your design requires a higher output current or tighter voltage regulation, consider using an external voltage regulator to ensure reliable operation.
  • To troubleshoot I2C interface issues, start by verifying the I2C bus voltage levels, clock frequency, and signal integrity. Use an oscilloscope to monitor the SCL and SDA lines, and check for bus contention, clock stretching, or other protocol violations. Also, ensure that the I2C slave address is correctly configured and that there are no conflicts with other devices on the bus.
  • The PHD3055E,118 is not hermetically sealed, so it's essential to take precautions when operating in high-humidity environments. Consider using conformal coating, potting, or other environmental protection methods to prevent moisture ingress. Additionally, ensure that the device is properly cleaned and dried before assembly to prevent moisture-related failures.

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PHD3055E,118 Overview

Use the download button to access the PHD3055E,118 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PHD30, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PHD3055ET/R Nexperia

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Part Image PHD3055E NXP Semiconductors

Power Field-Effect Transistor, 10.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image PHD3055ET/R NXP Semiconductors

Power Field-Effect Transistor, 10.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image 934054728118 Nexperia

Power Field-Effect Transistor, 10.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image PHD3055E/T3 Nexperia

Power Field-Effect Transistor, 10.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for PHD3055E,118, check out Findchips.com