Part Image

PHD36N03LT,118 - Nexperia

Description: --

Download PHD36N03LT,118 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
PHD36N03LT,118 - Nexperia  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

PHD36N03LT,118 Details

  • Manufacturer Part Number:

    PHD36N03LT,118

  • Brand Name:

    Nexperia

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK

  • Package Description:

    SMALL OUTLINE, R-PSSO-G2

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT428

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    43.4 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57.6 W

  • Pulsed Drain Current-Max (IDM):

    173.6 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PHD36N03LT,118 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for PHD36N03LT,118 is not explicitly stated in the datasheet. However, NXP provides a SOA graph in the application note AN11158, which shows the device's safe operating area boundaries. It's essential to consult this graph to ensure the device operates within the recommended limits.
  • Proper thermal management is crucial for the PHD36N03LT,118. Ensure a good thermal interface between the device and the heat sink. Use a thermal pad or thermal grease to fill any air gaps. The device's thermal resistance (Rth(j-a)) is 2.5 K/W. Keep the junction temperature (Tj) below 150°C to prevent thermal runaway.
  • A good PCB layout is essential for the PHD36N03LT,118. Keep the drain and source pins as close as possible to the heat sink. Use a solid copper plane for the drain and source connections. Ensure the gate drive signal has a low impedance path to the gate pin. Consult the NXP application note AN11158 for more detailed PCB layout guidelines.
  • The PHD36N03LT,118 is sensitive to electrostatic discharge (ESD). Handle the device with an ESD wrist strap or mat. Ensure the PCB has ESD protection components, such as TVS diodes or ESD arrays, on the input and output lines. Follow proper ESD handling procedures during assembly and testing.
  • The recommended gate drive voltage for the PHD36N03LT,118 is between 10V and 15V. The gate drive current should be sufficient to charge the gate capacitance quickly, typically in the range of 1A to 5A. Ensure the gate drive signal has a fast rise and fall time to minimize switching losses.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

PHD36N03LT,118 Overview

Use the download button to access the PHD36N03LT,118 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PHD36, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

Parts related to PHD36N03LT,118

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

PHD36N03LT,118 Alternates

Showing results

Image Part Number Model
Part Image 934057949118 Nexperia

Power Field-Effect Transistor, 43.4A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image PHD36N03LT Nexperia

Power Field-Effect Transistor, 43.4A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252