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PHD78NQ03LT,118 - Nexperia

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PHD78NQ03LT,118 Details

  • Manufacturer Part Number:

    PHD78NQ03LT,118

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT428

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    170 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    107 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PHD78NQ03LT,118 Frequently Asked Questions (FAQs)

  • Nexperia recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a heat sink.
  • To ensure proper biasing, Nexperia recommends using a voltage regulator or a voltage divider network to set the gate-source voltage (Vgs) within the recommended range (typically 2-5V). Additionally, a pull-down resistor (Rg) should be used to prevent unwanted turn-on.
  • Operating the PHD78NQ03LT,118 beyond the recommended temperature range (-55°C to 150°C) can lead to reduced performance, increased power consumption, and potentially even device failure. It's essential to ensure the device operates within the specified temperature range to maintain reliability and performance.
  • To protect the PHD78NQ03LT,118 from ESD, Nexperia recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Additionally, handling the device with ESD-safe materials and following proper handling procedures can help prevent ESD damage.
  • Nexperia recommends soldering the PHD78NQ03LT,118 using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30-60 seconds. Hand soldering is not recommended due to the device's small size and high power density.

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PHD78NQ03LT,118 Overview

Use the download button to access the PHD78NQ03LT,118 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PHD78, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PHD78NQ03LT NXP Semiconductors

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Part Image PHD78NQ03LT/T3 NXP Semiconductors

Power Field-Effect Transistor, 75A I(D), 25V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image 934056888118 NXP Semiconductors

Power Field-Effect Transistor, 75A I(D), 25V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image PHD78NQ03LT/T3 Nexperia

Power Field-Effect Transistor, 75A I(D), 25V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image 934056888118 Nexperia

Power Field-Effect Transistor, 75A I(D), 25V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for PHD78NQ03LT,118, check out Findchips.com