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PJA3416AE_R1_00001 - PANJIT

Description: MOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected

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PJA3416AE_R1_00001 - PANJIT PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - PJA3416AEaa
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PJA3416AE_R1_00001 - PANJIT  - 3D model - SOT23 (3-Pin) - PJA3416AEaa
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PJA3416AE_R1_00001 Details

  • Manufacturer Part Number:

    PJA3416AE_R1_00001

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PJA3416AE_R1_00001 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the PJA3416AE_R1_00001 is -40°C to 85°C.
  • To ensure reliability in high-temperature applications, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, thermal interface materials, and airflow management.
  • The maximum allowable power dissipation for the PJA3416AE_R1_00001 is typically specified as 1.5W, but it's essential to check the datasheet for specific derating curves and thermal management guidelines.
  • To prevent electrostatic discharge (ESD) damage, it's crucial to follow proper handling and storage procedures, including the use of ESD-safe materials, wrist straps, and mats.
  • For optimal performance and signal integrity, it's recommended to follow the datasheet's guidelines for PCB layout and routing, including trace width, spacing, and layer stacking.

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PJA3416AE_R1_00001 Overview

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Part Image PJA3416AE_R2_00001 PanJit Semiconductor

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET