Part Image

PJA3441_R1_00001 - PANJIT

Description: MOSFET /A41/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-40TMP/NF40T-QI02/PJ///

Download PJA3441_R1_00001 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
PJA3441_R1_00001 - PANJIT PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23_2021
click to zoom
3D Models
PJA3441_R1_00001 - PANJIT  - 3D model - SOT23 (3-Pin) - SOT-23_2021
click to zoom

PJA3441_R1_00001 Details

  • Manufacturer Part Number:

    PJA3441_R1_00001

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    3.1 A

  • Drain-source On Resistance-Max:

    0.088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12.4 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PJA3441_R1_00001 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from the power plane to minimize noise and EMI.
  • Use a thermal pad or a heat sink to dissipate heat, and ensure good airflow around the device. Also, follow the recommended operating conditions and derating guidelines in the datasheet.
  • Operating at a lower voltage may reduce performance and increase power consumption, while operating at a higher voltage may reduce lifespan and increase the risk of damage. It's recommended to stick to the recommended voltage range.
  • Use a logic analyzer or oscilloscope to monitor the device's signals and verify that the input signals meet the recommended specifications. Check for proper power supply, decoupling, and signal integrity.
  • Yes, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is properly grounded. Avoid touching the device's pins or exposing it to static electricity.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

PJA3441_R1_00001 Overview

Use the download button to access the PJA3441_R1_00001 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like PJA34, or try a keyword search, such as Power Field-Effect Transistors

Parts related to PJA3441_R1_00001

Showing 0 results

PJA3441_R1_00001 Alternates

Showing results

Image Part Number Model
Part Image PJA3441-AU_R1_000A1 PanJit Semiconductor

Power Field-Effect Transistor, 3.1A I(D), 40V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI2319DS-T1 Vishay Intertechnologies

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2319DS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2319DS-T1 Vishay Siliconix

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2319DS Vishay Siliconix

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for PJA3441_R1_00001, check out Findchips.com