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PJD50N15S-AU - PANJIT

Description: Medium Voltage MOSFET (60-200V,Rds(on)<1Ω) - PJD50N15S-AU, AEC-Q101, N Polarity, Single, 65A, 150V, TO-252AA

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PCB Footprints
PJD50N15S-AU - PANJIT PCB footprint - Other - Other - TO-252AA_2024-3
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PJD50N15S-AU - PANJIT  - 3D model - Other - TO-252AA_2024-3
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PJD50N15S-AU Details

  • Manufacturer Part Number:

    PJD50N15S-AU

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    13 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    27 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3 W

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Reference Standard:

    AEC-Q101; IEC-61249; MIL-STD-750

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

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PJD50N15S-AU Overview

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