PJD80N04S-AU - PANJIT

PJD80N04S-AU Details

• Manufacturer Part Number:

  PJD80N04S-AU

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Manufacturer:

  PanJit Semiconductor

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  229 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  40 V

• Drain Current-Max (ID):

  100 A

• Drain-source On Resistance-Max:

  0.0026 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  160 pF

• JEDEC-95 Code:

  TO-252AA

• JESD-30 Code:

  R-PSSO-G2

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation Ambient-Max:

  3 W

• Power Dissipation-Max (Abs):

  136 W

• Pulsed Drain Current-Max (IDM):

  665 A

• Reference Standard:

  AEC-Q101; IEC-61249; MIL-STD-750

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Element Material:

  SILICON