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PJMP190N60E1 - PANJIT

Description: Super Junction MOSFET (600-650V) - PJMP190N60E1 , N Channel, 20.6A, 600V, TO-220AB-L

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PCB Footprints
PJMP190N60E1 - PANJIT PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB-L
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3D Models
PJMP190N60E1 - PANJIT  - 3D model - Transistor Outline, Vertical - TO-220AB-L
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PJMP190N60E1 Details

  • Manufacturer Part Number:

    PJMP190N60E1

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220AB-L, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20.6 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    13 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    62 A

  • Reference Standard:

    IEC-61249; MIL-STD-750

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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PJMP190N60E1 Overview

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