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PJQ5540VC-AU - PANJIT

Description: Low Voltage MOSFET (20-40V,Rds(on)<1Ω) - PJQ5540VC-AU, AEC-Q101, N Polarity, Single, 246A, 40V, DFN5060X-8L

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PJQ5540VC-AU - PANJIT PCB footprint - Other - Other - DFN5060X-8L
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PJQ5540VC-AU - PANJIT  - 3D model - Other - DFN5060X-8L
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PJQ5540VC-AU Details

  • Manufacturer Part Number:

    PJQ5540VC-AU

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    265 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.00169 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    140 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3.3 W

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    735 A

  • Reference Standard:

    AEC-Q101; IEC-61249; MIL-STD-750

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

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PJQ5540VC-AU Overview

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