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PJQ5839E-AU - PANJIT

Description: Low Voltage MOSFET (20-40V,Rds(on)<1Ω) - PJQ5839E-AU, AEC-Q101, P/P Polarity, Dual, -31A, -30V, DFN5060B-8L

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PJQ5839E-AU Details

  • Manufacturer Part Number:

    PJQ5839E-AU

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN5060B-8L, 8 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.0191 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    121 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    AEC-Q101; IEC-61249; MIL-STD-750

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

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PJQ5839E-AU Overview

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