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PMN25UN,115 - Nexperia

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PMN25UN,115 Details

  • Manufacturer Part Number:

    PMN25UN,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOP

  • Package Description:

    PLASTIC, SC-74, TSOP-6

  • Pin Count:

    6

  • Manufacturer Package Code:

    SOT457

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PMN25UN,115 Frequently Asked Questions (FAQs)

  • A good PCB layout for PMN25UN,115 should include a solid copper plane on the bottom layer, connected to the drain pin, to act as a heat sink. Additionally, using thermal vias and a thermal pad can help to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • When paralleling multiple PMN25UN,115 devices, it's crucial to ensure that each device has its own separate gate resistor and that the gate signals are properly synchronized. Additionally, the devices should be matched in terms of their electrical characteristics, and the PCB layout should be designed to minimize current imbalance and thermal gradients.
  • To protect the PMN25UN,115 from overvoltage and overcurrent conditions, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, consider using a fuse or a current-limiting resistor in series with the device.
  • A good gate drive circuit for PMN25UN,115 should include a low-impedance gate driver, a suitable gate resistor, and a bootstrap capacitor. The gate driver should be able to provide a high current pulse to quickly charge and discharge the gate capacitance.

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PMN25UN,115 Overview

Use the download button to access the PMN25UN,115 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PMN25, or try a keyword search, such as Small Signal Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PMN25UN Nexperia

Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET