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PSMN026-80YS,115 - Nexperia

Description: MOSFETs PSMN026-80YS/SOT669/LFPAK

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PCB Footprints
PSMN026-80YS,115 - Nexperia PCB footprint - Other - Other -  LFPAK56; Power-SO8 (SOT669)
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3D Models
PSMN026-80YS,115 - Nexperia  - 3D model - Other -  LFPAK56; Power-SO8 (SOT669)
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PSMN026-80YS,115 Details

  • Manufacturer Part Number:

    PSMN026-80YS,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    LFPAK-4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • Country Of Origin:

    Malaysia, Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.85

  • Additional Feature:

    HIGH EFFICIENCY

  • Avalanche Energy Rating (Eas):

    32 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.0275 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    137 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN026-80YS,115 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for PSMN026-80YS,115 is -55°C to 150°C.
  • To ensure safe operating area (SOA) for PSMN026-80YS,115, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider the thermal management and heat dissipation in your design.
  • For optimal performance and thermal management, follow the recommended PCB layout and thermal design guidelines in the datasheet and application notes. Ensure good thermal conductivity, minimal thermal resistance, and adequate heat sinking.
  • To prevent electrostatic discharge (ESD) damage, handle the PSMN026-80YS,115 MOSFET with proper ESD protection measures, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging and storage.
  • The PSMN026-80YS,115 MOSFET from Nexperia meets the industry-standard reliability and quality standards, including AEC-Q101 and ISO/TS 16949. Refer to the datasheet and manufacturer's documentation for specific details.

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PSMN026-80YS,115 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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