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PSMN063-150D,118 - Nexperia

Description: MOSFET TAPE13 PWR-MOS

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PSMN063-150D,118 Details

  • Manufacturer Part Number:

    PSMN063-150D,118

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT428

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Avalanche Energy Rating (Eas):

    502 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.063 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    98 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    116 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN063-150D,118 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PSMN063-150D,118 is a D2PAK package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, ensure the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C, and consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The maximum allowed voltage transient for PSMN063-150D,118 is 150% of the maximum rated voltage (Vds) for a duration of less than 10ms, according to the datasheet.
  • Yes, you can use multiple PSMN063-150D,118 devices in parallel to increase current handling, but ensure proper thermal management and consider the impact on overall system reliability.
  • Select a gate resistor value that ensures a rise time of less than 100ns and a fall time of less than 50ns, while also considering the gate drive voltage and current requirements.

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PSMN063-150D,118 Overview

Use the download button to access the PSMN063-150D,118 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PSMN0, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PSMN063-150D Nexperia

Power Field-Effect Transistor, 29A I(D), 150V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET