PSMN1R3-100ASFJ - Nexperia

PSMN1R3-100ASFJ Details

• Manufacturer Part Number:

  PSMN1R3-100ASFJ

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Manufacturer:

  Nexperia

• YTEOL:

  6

• Additional Feature:

  AVALANCHE RATED

• Avalanche Energy Rating (Eas):

  1126 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  355 A

• Drain-source On Resistance-Max:

  0.00192 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  239 pF

• JEDEC-95 Code:

  MO-359

• JESD-30 Code:

  R-PDSO-G12

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  12

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  935 W

• Pulsed Drain Current-Max (IDM):

  2236 A

• Reference Standard:

  IEC-60134

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON