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PSMN1R9-80SSEJ - Nexperia

Description: Power MOSFET, N Channel, 80 V, 286 A, 0.0016 ohm, LFPAK88, Surface Mount

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PSMN1R9-80SSEJ - Nexperia PCB footprint - Other - Other - PSMN1R9-80SSEJ-1
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PSMN1R9-80SSEJ - Nexperia  - 3D model - Other - PSMN1R9-80SSEJ-1
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PSMN1R9-80SSEJ Details

  • Manufacturer Part Number:

    PSMN1R9-80SSEJ

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-1235, 4 PIN

  • Country Of Origin:

    Malaysia, Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    840 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    286 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    169 pF

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    340 W

  • Pulsed Drain Current-Max (IDM):

    1142 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN1R9-80SSEJ Frequently Asked Questions (FAQs)

  • The PSMN1R9-80SSEJ can operate safely between -55°C and 150°C (TJ), and up to 175°C for a short period of time (less than 1 minute).
  • To ensure SOA is not exceeded, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider using a thermal model and simulation tools to verify the design.
  • Use a PCB layout that minimizes thermal resistance and ensures good heat dissipation. A thermal pad or heat sink can be used to improve heat dissipation. Follow Nexperia's application notes and PCB layout guidelines for more information.
  • Yes, the PSMN1R9-80SSEJ is suitable for high-frequency switching applications up to 1 MHz. However, consider the MOSFET's switching characteristics, such as rise and fall times, and ensure the design meets the required specifications.
  • The internal diode and body diode can be handled using a freewheeling diode or a snubber circuit to prevent voltage spikes and ringing. Consult Nexperia's application notes and design guides for more information.

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PSMN1R9-80SSEJ Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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