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PSMN2R0-30YL,115 - Nexperia

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PSMN2R0-30YL,115 Details

  • Manufacturer Part Number:

    PSMN2R0-30YL,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SOIC

  • Package Description:

    PLASTIC, LFPAK-4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    3

  • Additional Feature:

    HIGH EFFICIENCY

  • Avalanche Energy Rating (Eas):

    151 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    347 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    97 W

  • Pulsed Drain Current-Max (IDM):

    667 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN2R0-30YL,115 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PSMN2R0-30YL,115 is a DPAK (TO-252) package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The maximum allowed voltage on the gate of PSMN2R0-30YL,115 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation.
  • Yes, PSMN2R0-30YL,115 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout, decoupling, and gate drive design to minimize switching losses and electromagnetic interference (EMI).
  • To protect PSMN2R0-30YL,115 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

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PSMN2R0-30YL,115 Overview

Use the download button to access the PSMN2R0-30YL,115 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PSMN2, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PSMN2R0-30YL NXP Semiconductors

Power Field-Effect Transistor, 100A I(D), 30V, 0.00263ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Part Image PSMN2R0-30YL,115 NXP Semiconductors

Power Field-Effect Transistor, 100A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Part Image PSMN2R0-30YL Nexperia

Power Field-Effect Transistor, 100A I(D), 30V, 0.00263ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235