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PSMN4R0-60YS,115 - Nexperia

Description: MOSFETs PSMN4R0-60YS/SOT669/LFPAK

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PCB Footprints
PSMN4R0-60YS,115 - Nexperia PCB footprint - Other - Other - (LFPAK56; Power-SO8); 4 leads SOT669
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3D Models
PSMN4R0-60YS,115 - Nexperia  - 3D model - Other - (LFPAK56; Power-SO8); 4 leads SOT669
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PSMN4R0-60YS,115 Details

  • Manufacturer Part Number:

    PSMN4R0-60YS,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    SOP-8, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.6

  • Additional Feature:

    HIGH EFFICIENCY

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    63 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    240 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 7 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    418 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN4R0-60YS,115 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PSMN4R0-60YS,115 is a D2PAK package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and follow proper thermal management and cooling techniques.
  • The maximum allowed voltage on the gate of PSMN4R0-60YS,115 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation.
  • Yes, PSMN4R0-60YS,115 is suitable for high-frequency switching applications up to 100 kHz, but ensure that the device is properly snubbed and that the PCB layout is optimized for high-frequency operation.
  • To protect PSMN4R0-60YS,115 from ESD, handle the device with an ESD wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.

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PSMN4R0-60YS,115 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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