PSMN4R8-100BSE - Nexperia

PSMN4R8-100BSE Details

• Manufacturer Part Number:

  PSMN4R8-100BSE

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  D2PAK-3/2

• Country Of Origin:

  Philippines

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Manufacturer:

  Nexperia

• YTEOL:

  5.9

• Avalanche Energy Rating (Eas):

  542 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  120 A

• Drain-source On Resistance-Max:

  0.0048 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  643 pF

• JESD-30 Code:

  R-PSSO-G2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  245

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation Ambient-Max:

  405 W

• Power Dissipation-Max (Abs):

  405 W

• Pulsed Drain Current-Max (IDM):

  707 A

• Reference Standard:

  IEC-60134

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  40

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  294 ns

• Turn-on Time-Max (ton):

  159 ns