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PSMN7R8-120PSQ - Nexperia

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PSMN7R8-120PSQ Details

  • Manufacturer Part Number:

    PSMN7R8-120PSQ

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220

  • Package Description:

    SC-46, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT78

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    HIGH EFFICIENCY

  • Avalanche Energy Rating (Eas):

    386 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.0079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    298 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    349 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN7R8-120PSQ Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the PSMN7R8-120PSQ is a DPAK (TO-252) package with a minimum pad size of 2.5 mm x 2.5 mm and a thermal pad size of 3.5 mm x 3.5 mm.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its specified operating temperature range (up to 150°C).
  • The maximum allowed voltage derating for the PSMN7R8-120PSQ is 10% of the maximum rated voltage (120V) at high temperatures (above 100°C). This means the maximum allowed voltage at high temperatures is 108V.
  • Yes, the PSMN7R8-120PSQ is suitable for switching applications due to its low RDS(on) and high current capability. However, it's essential to ensure that the device is operated within its specified switching frequency and duty cycle to avoid overheating and premature failure.
  • To protect the PSMN7R8-120PSQ from ESD, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap, ESD mat, or ESD bag, and ensuring that the device is stored in a conductive or anti-static packaging.

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PSMN7R8-120PSQ Overview

Use the download button to access the PSMN7R8-120PSQ 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PSMN7, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PSMN7R8-120PS,127 Nexperia

Power Field-Effect Transistor, 70A I(D), 120V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image PSMN7R8-120PS Nexperia

Power Field-Effect Transistor, 70A I(D), 120V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB