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PSMN8R2-80YS,115 - Nexperia

Description: MOSFET N-CH 80V 8.5 mOhm Standard MOSFET

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PSMN8R2-80YS,115 - Nexperia PCB footprint - Other - Other - PSMN8R2-80YS,115-1
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PSMN8R2-80YS,115 - Nexperia  - 3D model - Other - PSMN8R2-80YS,115-1
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PSMN8R2-80YS,115 Details

  • Manufacturer Part Number:

    PSMN8R2-80YS,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    LFPAK-4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.9

  • Additional Feature:

    HIGH EFFICIENCY

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    82 A

  • Drain-source On Resistance-Max:

    0.0085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    180 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    326 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN8R2-80YS,115 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PSMN8R2-80YS,115 is a standard SOT223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, it is recommended to follow Nexperia's guidelines for thermal design and layout, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowed voltage for PSMN8R2-80YS,115 is 80V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, PSMN8R2-80YS,115 can be used in switching applications, but it is essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is within the recommended range.
  • The power dissipation of PSMN8R2-80YS,115 can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

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PSMN8R2-80YS,115 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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