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PXN6R7-30QLJ - Nexperia

Description: MOSFET MOS DISCRETES

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PXN6R7-30QLJ - Nexperia PCB footprint - Other - Other - PXN6R7-30QLJ-3
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PXN6R7-30QLJ - Nexperia  - 3D model - Other - PXN6R7-30QLJ-3
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PXN6R7-30QLJ Details

  • Manufacturer Part Number:

    PXN6R7-30QLJ

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-8002, 8 PIN

  • Manufacturer Package Code:

    SOT8002-1

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.3

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    34.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12.7 A

  • Drain-source On Resistance-Max:

    0.0067 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    66 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40.3 W

  • Pulsed Drain Current-Max (IDM):

    87 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PXN6R7-30QLJ Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the PXN6R7-30QLJ is a standard SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a non-solder mask defined (NSMD) pad shape.
  • To ensure proper biasing, connect the gate to a voltage source through a suitable resistor (e.g., 1 kΩ to 10 kΩ) and ensure the drain-source voltage is within the recommended operating range (30 V). Additionally, provide a bypass capacitor (e.g., 100 nF) between the gate and source pins to reduce noise and oscillations.
  • The maximum allowed power dissipation for the PXN6R7-30QLJ is 1.25 W, which is dependent on the ambient temperature and the thermal resistance of the PCB and surrounding environment. Ensure proper thermal design and heat sinking to prevent overheating.
  • While the PXN6R7-30QLJ is suitable for switching applications, its frequency response is limited to around 100 kHz due to its internal capacitances and switching times. For high-frequency switching applications (>100 kHz), consider using a more specialized MOSFET or a different device with improved high-frequency performance.
  • To protect the PXN6R7-30QLJ from ESD, handle the device with anti-static wrist straps, mats, or bags. Ensure the PCB has proper ESD protection circuits, such as TVS diodes or ESD protection arrays, and follow proper assembly and handling procedures to prevent ESD damage.

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PXN6R7-30QLJ Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PXN6R7-30QL Nexperia

Power Field-Effect Transistor, 12.7A I(D), 30V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET