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PZT751T1G - onsemi

Description: The SOT-223 Package can be soldered using wave or reflow.; SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die; NPN Complement is PZT651T1; High Current: 2.0 Amp; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free

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PCB Footprints
PZT751T1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 TP-261 CASE 318E-04
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PZT751T1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 TP-261 CASE 318E-04
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PZT751T1G Details

  • Manufacturer Part Number:

    PZT751T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    75 MHz

PZT751T1G Frequently Asked Questions (FAQs)

  • The recommended storage condition for PZT751T1G is in a dry, cool place, away from direct sunlight and moisture. The storage temperature should be between -40°C to 125°C.
  • Handle the PZT751T1G by the body of the device, avoiding touching the leads or electrical connections. Use an anti-static wrist strap or mat to prevent electrostatic discharge damage.
  • The maximum power dissipation of PZT751T1G is 1.5W. Exceeding this limit may cause the device to overheat and fail.
  • Yes, PZT751T1G is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability.
  • Use a soldering iron with a temperature of 260°C (500°F) or less. Apply a small amount of solder to the leads and avoid applying excessive force or pressure, which can damage the device.

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PZT751T1G Overview

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Image Part Number Model
Part Image PZT751T1 Rochester Electronics LLC

2000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN

Part Image PZT751T1 onsemi

Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA