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QH8K26TR - ROHM Semiconductor

Description: 40V Nch+Nch Small Signal MOSFET

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Symbol
QH8K26TR - ROHM Semiconductor - PCB symbol
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PCB Footprints
QH8K26TR - ROHM Semiconductor PCB footprint - Other - Other - TSMT8
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3D Models
QH8K26TR - ROHM Semiconductor - 3D model - Other - TSMT8
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QH8K26TR Details

  • Manufacturer Part Number:

    QH8K26TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-09-12

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain-source On Resistance-Max:

    0.038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

QH8K26TR Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A minimum of 3mm clearance around the device is also recommended to prevent thermal interference.
  • The QH8K26TR requires a stable input voltage (VIN) between 4.5V and 18V, with a recommended operating voltage of 12V. Ensure the input voltage is well-regulated and decoupled with a 10uF capacitor to prevent noise and oscillations.
  • The maximum power dissipation for the QH8K26TR is 2.5W. Exceeding this limit can cause the device to overheat, leading to reduced performance, reliability issues, or even failure.
  • The QH8K26TR is rated for operation up to 125°C (TJ). However, it's essential to ensure proper thermal management and derate the power dissipation accordingly to prevent overheating and ensure reliable operation.
  • Handle the QH8K26TR with ESD-safe materials and tools. Ensure the device is stored in an ESD-protected package, and ground yourself before handling the device. Use an ESD wrist strap or mat during assembly and testing.

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QH8K26TR Overview

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