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QH8KC6TCR - ROHM Semiconductor

Description: 60V 5.5A, Dual Nch+Nch, RDS(on)(Max.) 30mΩ, PD 1.5W, TSMT8, Power MOSFET

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QH8KC6TCR - ROHM Semiconductor - PCB symbol
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PCB Footprints
QH8KC6TCR - ROHM Semiconductor PCB footprint - Other - Other - QH8KC6TCR
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QH8KC6TCR - ROHM Semiconductor - 3D model - Other - QH8KC6TCR
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QH8KC6TCR Details

  • Manufacturer Part Number:

    QH8KC6TCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    2.5 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

QH8KC6TCR Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • ROHM recommends following the derating curves in the datasheet for operation above 85°C. Additionally, ensure good thermal design, and consider using a heat sink or thermal interface material to reduce junction temperature.
  • Although the datasheet doesn't specify a maximum input voltage, ROHM recommends limiting the input voltage to 5.5V to prevent damage to the internal ESD protection diodes.
  • Yes, the QH8KC6TCR is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and bypassing to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • The POR and BOR functions are internally implemented and do not require external components. However, ensure that the power supply ramp-up time is within the specified limits to prevent false resets.

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QH8KC6TCR Overview

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