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QH8M22TCR - ROHM Semiconductor

Description: QH8M22TCR Dual N/P-Channel MOSFET, 2 (P Channel) A, 4.5 (N Channel) A, 40 (N Channel) V, 40 (P Channel) V QH8M22, 8-Pin

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QH8M22TCR - ROHM Semiconductor PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - TSMT8
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QH8M22TCR - ROHM Semiconductor  - 3D model - SO Transistor Flat Lead - TSMT8
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QH8M22TCR Details

  • Manufacturer Part Number:

    QH8M22TCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-08-19

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1.6 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

QH8M22TCR Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the high-frequency traces short and away from the edges of the board. Use a common mode choke or ferrite bead to filter the input power.
  • To ensure stability, use a minimum output capacitance of 10uF with an ESR of 1ohm or less. Also, ensure that the input voltage is within the recommended range and the output current is within the specified maximum rating.
  • The maximum ambient temperature for QH8M22TCR is 85°C. However, the device can operate up to 105°C with a derated output current.
  • Yes, QH8M22TCR is suitable for high-reliability applications. It has a built-in overcurrent protection, overvoltage protection, and thermal shutdown. However, it's essential to follow the recommended PCB layout, thermal management, and component selection to ensure reliability.
  • The power dissipation of QH8M22TCR can be calculated using the formula: Pd = (Vin - Vout) x Iout. Where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.

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QH8M22TCR Overview

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