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QPD1008L - Qorvo

Description: DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor

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QPD1008L - Qorvo  - 3D model
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QPD1008L Details

  • Manufacturer Part Number:

    QPD1008L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.90

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Qorvo

  • YTEOL:

    6.85

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Highest Frequency Band:

    S BAND

  • JESD-30 Code:

    R-CDFM-F2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM NITRIDE

QPD1008L Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The QPD1008L should be placed near the edge of the board to minimize signal loss. A microstrip or coplanar waveguide transmission line should be used to connect the QPD1008L to the antenna.
  • Use a Smith chart to design a matching network that transforms the antenna impedance to 50 ohms. The QPD1008L has a complex impedance, so a multi-component matching network may be required. Simulation tools like ADS or AWR can be used to optimize the matching network.
  • The QPD1008L can handle up to 38 dBm of input power. However, the maximum power handling may be limited by the application and the specific use case. It's recommended to consult with Qorvo's application engineers for specific guidance.
  • The QPD1008L requires a bias voltage of 3.3V to 5V. A voltage regulator or a low-dropout regulator (LDO) can be used to regulate the bias voltage. The bias current should be limited to 100 mA or less to prevent overheating.
  • The QPD1008L operates from -40°C to 85°C. However, the device may require derating at higher temperatures to prevent overheating. Consult the datasheet for specific derating guidelines.

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QPD1008L Overview

Use the download button to access the QPD1008L 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like QPD10, or try a keyword search, such as RF Power Field-Effect Transistors

About Qorvo

Qorvo is a prominent American semiconductor company that specializes in the design and manufacturing of radio frequency (RF) solutions. The company was formed in 2015 through the merger of TriQuint Semiconductor and RF Micro Devices. Qorvo's product portfolio encompasses a wide range of RF components and semiconductor technologies used in various applications, including wireless communications, aerospace and defense, and IoT (Internet of Things) devices.

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