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R1EV5801MBSDRDI#B0 - Renesas Electronics

Description: Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.

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R1EV5801MBSDRDI#B0 - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - P-SOP32-11.3x20.45-1.27
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R1EV5801MBSDRDI#B0 - Renesas Electronics  - 3D model - Small Outline Packages - P-SOP32-11.3x20.45-1.27
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R1EV5801MBSDRDI#B0 Details

  • Manufacturer Part Number:

    R1EV5801MBSDRDI#B0

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOP

  • Package Description:

    SOP-32

  • Pin Count:

    32

  • Manufacturer Package Code:

    PRSP0032DC

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    250 ns

  • Additional Feature:

    IT ALSO HAVE ACCESS TIME 150 NS OPERATES AT 4.5 TO 5.5 V SUPPLY VOLTAGE

  • JESD-30 Code:

    R-PDSO-G32

  • Length:

    20.45 mm

  • Memory Density:

    1048576 bit

  • Memory IC Type:

    EEPROM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    32

  • Number of Words:

    131072 words

  • Number of Words Code:

    128000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128KX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    PARALLEL

  • Programming Voltage:

    3 V

  • Seated Height-Max:

    3 mm

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Width:

    11.3 mm

  • Write Cycle Time-Max (tWC):

    10 ms

R1EV5801MBSDRDI#B0 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range is 2.7V to 5.5V, with a typical voltage of 3.3V.
  • The clock settings can be configured using the Clock Control Register (CCR) and the Clock Source Select Register (CSSR). Refer to the datasheet for specific register settings and bit configurations.
  • The maximum frequency of the CPU clock is 32 MHz.
  • The R1EV5801MBSDRDI#B0 has a built-in watchdog timer (WDT) that can be enabled and configured using the Watchdog Timer Control Register (WDTCR). Refer to the datasheet for specific register settings and bit configurations.
  • The LVD is a feature that detects when the voltage supply drops below a certain threshold, allowing the microcontroller to take action to prevent data corruption or system malfunction.

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R1EV5801MBSDRDI#B0 Overview

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