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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
R1EV58064BSCRBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58064BSCRBI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58064BSCNBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58064BSCNBI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58256BTDRBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58256BTDRBI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58064BDARBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Dual-In-Line Packages	R1EV58064BDARBI#B0	3D model available Symbol and footprint available 3	1 Download Model

R1EV58256BSCNBI#S0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58256BSCNBI#S0	3D model available Symbol and footprint available 3	1 Download Model
R1EV5801MBTDRDI#B0 Renesas Electronics	1	Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word  8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.	Small Outline Packages	R1EV5801MBTDRDI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58256BSCNBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58256BSCNBI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58064BSCNBI#S0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58064BSCNBI#S0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58256BDANBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Dual-In-Line Packages	R1EV58256BDANBI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV5801MBSDRDI#B0 Renesas Electronics	1	Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.	Small Outline Packages	R1EV5801MBSDRDI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58064BSCRBI#S0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58064BSCRBI#S0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58064BTCNBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58064BTCNBI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58064BDANBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Dual-In-Line Packages	R1EV58064BDANBI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58064BTCRBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58064BTCRBI#B0	3D model available Symbol and footprint available 3	1 Download Model
R1EV58256BTCNBI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.	Small Outline Packages	R1EV58256BTCNBI#B0	3D model available Symbol and footprint available 3	1 Download Model

R1EV58256BTCNBI#B2 Renesas Electronics Corporation	1	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28		R1EV58256BTCNBI#B2	3D model not available Symbol and footprint not available 0	0 Build or Request
R1EV58064BTCRBI#B2 Renesas Electronics Corporation	1	EEPROM, 8KX8, 100ns, Parallel, CMOS, PDSO28		R1EV58064BTCRBI#B2	3D model not available Symbol and footprint not available 0	0 Build or Request
R1EV58256BTDRBI#B2 Renesas Electronics Corporation	1	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO32		R1EV58256BTDRBI#B2	3D model not available Symbol and footprint not available 0	0 Build or Request
R1EV58256BSCNBI#B2 Renesas Electronics Corporation	1	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28		R1EV58256BSCNBI#B2	3D model not available Symbol and footprint not available 0	0 Build or Request
R1EV58256BSCNBI#S2 Renesas Electronics Corporation	1	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28		R1EV58256BSCNBI#S2	3D model not available Symbol and footprint not available 0	0 Build or Request
R1EV58256BDANBI#B2 Renesas Electronics Corporation	1	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDIP28		R1EV58256BDANBI#B2	3D model not available Symbol and footprint not available 0	0 Build or Request

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