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R1EV5801MBTDRDI#B0 - Renesas Electronics

Description: Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word  8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.

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R1EV5801MBTDRDI#B0 - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - TSOP-32
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R1EV5801MBTDRDI#B0 - Renesas Electronics  - 3D model - Small Outline Packages - TSOP-32
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R1EV5801MBTDRDI#B0 Details

  • Manufacturer Part Number:

    R1EV5801MBTDRDI#B0

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOP(1)

  • Package Description:

    TSOP-32

  • Pin Count:

    32

  • Manufacturer Package Code:

    PTSA0032KD

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    250 ns

  • Additional Feature:

    IT ALSO HAVE ACCESS TIME 150 NS OPERATES AT 4.5 TO 5.5 V SUPPLY VOLTAGE

  • JESD-30 Code:

    R-PDSO-G32

  • Length:

    12.4 mm

  • Memory Density:

    1048576 bit

  • Memory IC Type:

    EEPROM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    32

  • Number of Words:

    131072 words

  • Number of Words Code:

    128000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128KX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Parallel/Serial:

    PARALLEL

  • Programming Voltage:

    3 V

  • Seated Height-Max:

    1.2 mm

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Width:

    8 mm

  • Write Cycle Time-Max (tWC):

    10 ms

R1EV5801MBTDRDI#B0 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for R1EV5801MBTDRDI#B0 is -40°C to 125°C.
  • To ensure reliable communication, make sure to follow the I2C bus specification, use proper pull-up resistors, and ensure that the clock frequency is within the recommended range.
  • The maximum current consumption of the R1EV5801MBTDRDI#B0 is 1.5mA (typical) and 3.5mA (maximum) at 3.3V supply voltage.
  • Implement error detection and correction mechanisms, such as checksums or CRC, and use the device's built-in error detection features, such as parity checking and timeout detection.
  • Yes, the R1EV5801MBTDRDI#B0 has built-in noise tolerance features, such as hysteresis and slew rate control, to ensure reliable operation in noisy environments.

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R1EV5801MBTDRDI#B0 Overview

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