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R6003KND3TL1 - ROHM Semiconductor

Description: 600V 3A TO-252, High-speed switching Power MOSFET

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R6003KND3TL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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R6003KND3TL1 - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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R6003KND3TL1 Details

  • Manufacturer Part Number:

    R6003KND3TL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-10-05

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    13.4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6003KND3TL1 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A minimum of 3mm clearance around the device is also recommended to prevent thermal interference.
  • To ensure stable operation with high-frequency switching, ROHM recommends using a low-ESR capacitor (e.g., ceramic or film capacitor) with a value of 1uF to 10uF, placed as close as possible to the device's power pins. Additionally, a 1kΩ to 10kΩ resistor in series with the gate driver can help reduce ringing and oscillations.
  • ROHM recommends limiting voltage transients to within ±10% of the maximum rated voltage (30V) to prevent damage to the device. Exceeding this limit may cause permanent damage or affect the device's reliability.
  • While the R6003KND3TL1 is rated for operation up to 150°C, ROHM recommends derating the device's power dissipation and voltage ratings according to the temperature derating curve provided in the datasheet. Additionally, ensure that the device is properly heatsinked and that the PCB is designed to withstand high temperatures.
  • To prevent latch-up, ROHM recommends using a soft-start circuit or a voltage ramp-up circuit to control the power-on sequence. Additionally, ensure that the device's power pins are properly bypassed with capacitors and that the PCB is designed to minimize parasitic inductance and capacitance.

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R6003KND3TL1 Overview

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