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Part Image

R6007ENX - ROHM Semiconductor

Description: 600V 7A TO-220FM, Low-noise Power MOSFET

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PCB Footprints

R6007ENX - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F_BLANK
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3D Models

R6007ENX - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220F_BLANK
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R6007ENX Details

  • Manufacturer Part Number:

    R6007ENX

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    FLANGE MOUNT, R-PSFM-T3

  • Reach Compliance Code:

    compliant

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • Risk Rank:

    2.35

  • Samacsys Modified On:

    2023-03-07 16:10:32

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    133 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.62 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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R6007ENX Overview

Use the download button to access the R6007ENX schematic symbol, PCB footprint, and 3D model.
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