Part Image

R6012ANX - ROHM Semiconductor

Description: ROHM R6012ANX N-channel MOSFET Transistor, 12 A, 600 V, 3-Pin TO-220FM

Download R6012ANX Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
R6012ANX - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FM_1
click to zoom
3D Models
R6012ANX - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220FM_1
click to zoom

R6012ANX Details

  • Manufacturer Part Number:

    R6012ANX

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220FM, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    0.265 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6012ANX Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the input and output traces as short as possible. Additionally, it's recommended to use a common mode choke and a 10uF capacitor for input filtering.
  • To ensure stable operation, it's essential to follow the recommended operating conditions, including input voltage, output current, and ambient temperature. Additionally, consider using thermal design and heat dissipation measures, such as a heat sink or thermal pad, to keep the junction temperature within the recommended range.
  • The maximum output current capability of the R6012ANX is 1.2A, but it's recommended to derate the output current based on the ambient temperature and the desired reliability level. ROHM provides a derating curve in the datasheet to help with this calculation.
  • To protect the R6012ANX from overvoltage and undervoltage conditions, consider using a voltage supervisor or a reset IC that can detect and respond to voltage faults. Additionally, use a TVS diode or a zener diode to clamp the input voltage and prevent damage from voltage spikes or surges.
  • ROHM recommends using a 10uF to 22uF ceramic capacitor with an X7R or X5R dielectric as the input capacitor. This helps to filter out noise and ripple on the input voltage and ensures stable operation.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

R6012ANX Overview

Use the download button to access the R6012ANX schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like R6012, or try a keyword search, such as Power Field-Effect Transistors

Parts related to R6012ANX

Showing 0 results