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R6030ENZ4C13 - ROHM Semiconductor

Description: 600V 30A TO-247, Low-noise Power MOSFET

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R6030ENZ4C13 - ROHM Semiconductor - PCB symbol
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PCB Footprints
R6030ENZ4C13 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_
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3D Models
R6030ENZ4C13 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-247_
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R6030ENZ4C13 Details

  • Manufacturer Part Number:

    R6030ENZ4C13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2018-10-10

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    636 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6030ENZ4C13 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the R6030ENZ4C13 is 2.5V to 5.5V, as specified in the datasheet.
  • To ensure stable operation, follow the recommended PCB layout guidelines, use a decoupling capacitor (e.g., 10nF to 100nF) close to the IC, and maintain a stable power supply voltage.
  • The maximum allowable power dissipation for the R6030ENZ4C13 is 250mW, as specified in the datasheet. Ensure that the device operates within this limit to prevent overheating and damage.
  • The R6030ENZ4C13 is rated for operation up to 125°C (TJ). However, it's essential to consider the derating of the maximum allowable power dissipation and ensure that the device operates within the specified temperature range to prevent damage or malfunction.
  • Handle the R6030ENZ4C13 with care, avoiding mechanical stress, and store it in a dry, clean environment. Follow the recommended storage and transportation guidelines to prevent damage or degradation of the device.

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R6030ENZ4C13 Overview

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