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R6030ENZC8 - ROHM Semiconductor

Description: MOSFET, N-CH, 600V, 30A, TO-3PF; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

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PCB Footprints

R6030ENZC8 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PF
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3D Models

R6030ENZC8 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-3PF
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Risk Rank

R6030ENZC8 — ROHM Semiconductor
2.2 - Low Design Risk
Design Risk Rank is determined by in-depth analysis across multiple factors, including part availability, functional equivalents, lifecycle and more. Learn more →

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