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R6030ENZC8 - ROHM Semiconductor

Description: MOSFET, N-CH, 600V, 30A, TO-3PF; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

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PCB Footprints
R6030ENZC8 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PF
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3D Models
R6030ENZC8 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-3PF
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R6030ENZC8 Details

  • Manufacturer Part Number:

    R6030ENZC8

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, TO-3PF, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    636 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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R6030ENZC8 Overview

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