Part Image

R6035ENZ4C13 - ROHM Semiconductor

Description: 600V 35A TO-247, Low-noise Power MOSFET

Download R6035ENZ4C13 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
R6035ENZ4C13 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - (TO-247_2021))))))
click to zoom
3D Models
R6035ENZ4C13 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - (TO-247_2021))))))
click to zoom

R6035ENZ4C13 Details

  • Manufacturer Part Number:

    R6035ENZ4C13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    796 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.102 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    240 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TUBE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    379 W

  • Pulsed Drain Current-Max (IDM):

    105 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6035ENZ4C13 Frequently Asked Questions (FAQs)

  • The thermal resistance (junction-to-ambient) of the R6035ENZ4C13 is typically around 30°C/W, but it can vary depending on the PCB layout, airflow, and other environmental factors.
  • The R6035ENZ4C13 has an operating temperature range of -40°C to 105°C, but it's recommended to derate the output current and voltage at higher temperatures to ensure reliability and prevent overheating.
  • The output voltage tolerance of the R6035ENZ4C13 is typically ±2% over the entire operating temperature range. You can calculate the tolerance by multiplying the nominal output voltage (1.3V) by the tolerance percentage (2%).
  • The recommended input capacitor value for the R6035ENZ4C13 is 1uF to 10uF, with a voltage rating of at least 6.3V. A larger capacitor value can help improve input voltage ripple rejection and stability.
  • Yes, the R6035ENZ4C13 can be used in battery-powered devices, but you should consider the quiescent current (Iq) and the dropout voltage (Vdo) to ensure efficient power management and minimize battery drain.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

R6035ENZ4C13 Overview

Use the download button to access the R6035ENZ4C13 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like R6035, or try a keyword search, such as Power Field-Effect Transistors

Parts related to R6035ENZ4C13

Showing 0 results