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R6035KNZ1C9 - ROHM Semiconductor

Description: MOSFET Nch 600V 35A Si MOSFET

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PCB Footprints
R6035KNZ1C9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_1
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3D Models
R6035KNZ1C9 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247_1
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R6035KNZ1C9 Details

  • Manufacturer Part Number:

    R6035KNZ1C9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    796 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.102 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    105 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6035KNZ1C9 Frequently Asked Questions (FAQs)

  • The thermal resistance (θJA) of the R6035KNZ1C9 is typically around 30°C/W, but it can vary depending on the PCB design, layout, and environment. It's essential to consider this value when designing the thermal management of the system.
  • To ensure stability with the R6035KNZ1C9, it's crucial to follow the recommended layout and component placement guidelines, use a suitable output capacitor (e.g., 10uF or larger), and maintain a minimum input capacitance of 1uF. Additionally, ensure that the input voltage is within the recommended range and that the device is operated within its specified temperature range.
  • The maximum dropout voltage of the R6035KNZ1C9 is around 1.5V, which means that the input voltage should be at least 1.5V higher than the output voltage to maintain regulation.
  • While the R6035KNZ1C9 has an operating temperature range of -40°C to 105°C, it's essential to consider the derating of the output current and power dissipation at higher temperatures. Be sure to check the datasheet and application notes for specific guidance on high-temperature operation.
  • To calculate the power dissipation of the R6035KNZ1C9, use the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current. Be sure to consider the maximum power dissipation rating of the device (typically around 1.5W) and ensure that the thermal management of the system can handle the calculated power dissipation.

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R6035KNZ1C9 Overview

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