Part Image

R6076ENZ4C13 - ROHM Semiconductor

Description: 600V 76A TO-247, Low-noise Power MOSFET

Download R6076ENZ4C13 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
R6076ENZ4C13 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - (TO-247_2021))))))
click to zoom
3D Models
R6076ENZ4C13 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - (TO-247_2021))))))
click to zoom

R6076ENZ4C13 Details

  • Manufacturer Part Number:

    R6076ENZ4C13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2018-10-10

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    1954 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    76 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    228 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6076ENZ4C13 Frequently Asked Questions (FAQs)

  • The thermal resistance (θJA) of the R6076ENZ4C13 is typically around 30°C/W, but it can vary depending on the PCB design, layout, and environmental conditions.
  • The R6076ENZ4C13 has an operating temperature range of -40°C to 105°C, but it's recommended to derate the output current and power dissipation at higher temperatures to ensure reliability and prevent thermal shutdown.
  • To ensure stability, follow the recommended PCB layout and component placement guidelines, use a suitable output capacitor with low ESR, and add a 10nF to 100nF ceramic capacitor between the VIN and GND pins to filter out noise.
  • The R6076ENZ4C13 can operate with an input voltage as low as 2.5V, but it's recommended to maintain a minimum input voltage of 3.5V to ensure stable operation and prevent dropout.
  • Yes, the R6076ENZ4C13 is suitable for battery-powered devices due to its low quiescent current (IQ) of 1.5mA and low dropout voltage, making it an efficient and reliable choice for battery-powered applications.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

R6076ENZ4C13 Overview

Use the download button to access the R6076ENZ4C13 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like R6076, or try a keyword search, such as Power Field-Effect Transistors

Parts related to R6076ENZ4C13

Showing 0 results