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R6076KNZ4C13 - ROHM Semiconductor

Description: 600V 76A TO-247, High-speed switching Power MOSFET

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R6076KNZ4C13 - ROHM Semiconductor - PCB symbol
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PCB Footprints
R6076KNZ4C13 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_2022-1
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3D Models
R6076KNZ4C13 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-247_2022-1
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R6076KNZ4C13 Details

  • Manufacturer Part Number:

    R6076KNZ4C13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2018-10-10

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    1954 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    76 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    228 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6076KNZ4C13 Frequently Asked Questions (FAQs)

  • The thermal resistance (θJA) of the R6076KNZ4C13 is typically around 30°C/W, but it can vary depending on the PCB design, layout, and environmental conditions.
  • While the R6076KNZ4C13 has an operating temperature range of -40°C to 105°C, it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature environments.
  • To ensure stability, follow the recommended layout and component placement guidelines, use a suitable output capacitor (e.g., 10uF or larger), and consider adding a noise reduction capacitor (e.g., 100nF) between the VIN and GND pins.
  • The R6076KNZ4C13 can handle input voltages up to 36V, but it's recommended to operate within the specified input voltage range (4.5V to 36V) to ensure reliable operation and prevent damage.
  • Yes, the R6076KNZ4C13 is suitable for battery-powered devices due to its low quiescent current (IQ) of 1.5mA (typical) and low dropout voltage (VDO) of 0.5V (typical).

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R6076KNZ4C13 Overview

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