Part Image

R6504KND3TL1 - ROHM Semiconductor

Description: High-speed Switching, Nch 650V 4A Power MOSFET

Download R6504KND3TL1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
R6504KND3TL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
click to zoom
3D Models
R6504KND3TL1 - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
click to zoom

R6504KND3TL1 Details

  • Manufacturer Part Number:

    R6504KND3TL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    34.8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    1.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    58 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R6504KND3TL1 Frequently Asked Questions (FAQs)

  • The thermal resistance (θJA) of the R6504KND3TL1 is 125°C/W, which is not explicitly mentioned in the datasheet. This information can be obtained from ROHM's application notes or by contacting their support team.
  • To ensure stability with the R6504KND3TL1, it's essential to follow the recommended PCB layout and component placement guidelines, use a suitable output capacitor with low ESR, and add a 10nF to 100nF ceramic capacitor between the VIN and GND pins to filter out noise.
  • Although the datasheet specifies a maximum input voltage of 36V, it's recommended to limit the input voltage to 30V to ensure reliable operation and prevent damage to the device.
  • The R6504KND3TL1 is rated for operation up to 125°C, but its performance and reliability may degrade at high temperatures. It's essential to consider the device's power dissipation, thermal management, and derating factors when operating in high-temperature environments.
  • To calculate the power dissipation of the R6504KND3TL1, use the formula: Pd = (VIN - VOUT) x IOUT. Make sure to consider the device's efficiency, input voltage, output voltage, and output current when calculating the power dissipation.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

R6504KND3TL1 Overview

Use the download button to access the R6504KND3TL1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like R6504, or try a keyword search, such as Power Field-Effect Transistors

Parts related to R6504KND3TL1

Showing 0 results