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R8001CND3FRATL - ROHM Semiconductor

Description: 800V 1A TO-252, Automotive Power MOSFET with integrated ESD protection diode

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R8001CND3FRATL - ROHM Semiconductor - PCB symbol
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R8001CND3FRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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R8001CND3FRATL - ROHM Semiconductor - 3D model - Other - TO-252 (DPAK)_Master
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R8001CND3FRATL Details

  • Manufacturer Part Number:

    R8001CND3FRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-12-06

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    0.066 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    8.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, EMBOSSED, 13 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Pulsed Drain Current-Max (IDM):

    4 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

R8001CND3FRATL Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure stable output voltage regulation, it's essential to follow the recommended input and output capacitor values, and to place them close to the IC. Additionally, a minimum input voltage of 2.5V is recommended, and the output voltage should not be adjusted to a value lower than 1.5V.
  • The maximum allowed input voltage ripple for the R8001CND3FRATL is 1Vp-p. Exceeding this value may affect the LDO's performance and stability.
  • While the R8001CND3FRATL has a maximum operating temperature of 125°C, it's essential to consider the derating of the output current and power dissipation at high temperatures. ROHM recommends consulting the thermal derating curve in the datasheet to ensure safe operation.
  • The R8001CND3FRATL has a built-in overcurrent protection (OCP) and short-circuit protection (SCP) circuitry. However, it's still recommended to add external protection components, such as a fuse or a PTC thermistor, to prevent damage from excessive current or voltage.

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R8001CND3FRATL Overview

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