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RB228NS150FHTL - ROHM Semiconductor

Description: Super Low I<sub>R</sub>, 150V, 30A, TO-263S (D2PAK), Schottky Barrier Diode for Automotive

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RB228NS150FHTL - ROHM Semiconductor PCB footprint - Other - Other - LPTS_Master
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RB228NS150FHTL Details

  • Manufacturer Part Number:

    RB228NS150FHTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-83, TO-263S, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-06-25

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.38

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.88 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    150 V

  • Reverse Current-Max:

    25 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RB228NS150FHTL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A thermal resistance of less than 10°C/W can be achieved with a well-designed PCB layout.
  • To ensure reliability, follow the recommended derating curve for the device, and consider using a heat sink or thermal interface material to reduce the junction temperature. Additionally, ensure that the device is operated within the specified maximum junction temperature (Tj) of 150°C.
  • The recommended gate resistor value depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10Ω to 100Ω is suitable for most applications. However, it's essential to consult the datasheet and application notes for more detailed guidance.
  • Yes, the RB228NS150FHTL can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.
  • The RB228NS150FHTL has an integrated ESD protection diode, but it's still essential to follow proper ESD handling procedures during assembly and testing. ROHM recommends using an ESD wrist strap or mat, and ensuring that the device is handled in a static-safe environment.

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