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RBQ10NS65AFHTL - ROHM Semiconductor

Description: Low I<sub>R</sub>, 65V, 10A, TO-263S (D2PAK), Schottky Barrier Diode for Automotive

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RBQ10NS65AFHTL - ROHM Semiconductor - PCB symbol
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RBQ10NS65AFHTL - ROHM Semiconductor PCB footprint - Other - Other - LPDS_Master
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RBQ10NS65AFHTL - ROHM Semiconductor - 3D model - Other - LPDS_Master
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RBQ10NS65AFHTL Details

  • Manufacturer Part Number:

    RBQ10NS65AFHTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-83, TO-263S, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-06-25

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.22

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.69 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    65 V

  • Reverse Current-Max:

    70 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

RBQ10NS65AFHTL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of 2.5mm x 2.5mm with a minimum of 1oz copper thickness and a thermal via array underneath the pad to ensure optimal heat dissipation.
  • The RBQ10NS65AFHTL requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias circuit is designed to provide a stable voltage and current to the device.
  • The maximum allowed power dissipation for the RBQ10NS65AFHTL is 2W. Ensure the device is operated within this limit to prevent overheating and damage.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the RBQ10NS65AFHTL from electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage.
  • Store the RBQ10NS65AFHTL in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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RBQ10NS65AFHTL Overview

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