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RBQ10NS65ATL - ROHM Semiconductor

Description: Schottky Barrier Diode,VR 65V,Io 10A,IFSM 50A,TO-263S (D2PAK).

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RBQ10NS65ATL - ROHM Semiconductor - PCB symbol
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RBQ10NS65ATL - ROHM Semiconductor PCB footprint - Other - Other - LPDS_Master
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RBQ10NS65ATL - ROHM Semiconductor - 3D model - Other - LPDS_Master
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RBQ10NS65ATL Details

  • Manufacturer Part Number:

    RBQ10NS65ATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-83, TO-263S, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-06-25

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.22

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.69 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    65 V

  • Reverse Current-Max:

    70 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RBQ10NS65ATL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A minimum of 1oz copper thickness is also recommended.
  • The RBQ10NS65ATL requires a bias voltage of 5V to 15V, with a recommended operating voltage of 10V. Ensure the bias voltage is stable and within the recommended range to achieve optimal performance.
  • The maximum allowed power dissipation for the RBQ10NS65ATL is 10W. Exceeding this limit may result in device damage or failure.
  • Yes, the RBQ10NS65ATL is suitable for high-frequency applications up to 100MHz. However, ensure proper PCB layout and decoupling to minimize parasitic effects and ensure stable operation.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the RBQ10NS65ATL from electrostatic discharge. Handle the device with care, and ensure proper grounding and shielding during assembly and testing.

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RBQ10NS65ATL Overview

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