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RBQ15BM65AFHTL - ROHM Semiconductor

Description: Low I<sub>R</sub>, 65V, 15A, TO-252 (DPAK), Schottky Barrier Diode for Automotive

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RBQ15BM65AFHTL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RBQ15BM65AFHTL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RBQ15BM65AFHTL Details

  • Manufacturer Part Number:

    RBQ15BM65AFHTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-06-25

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.22

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.63 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    7.5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    65 V

  • Reverse Current-Max:

    140 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RBQ15BM65AFHTL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2mm x 2mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A minimum of 1oz copper thickness is also recommended.
  • The RBQ15BM65AFHTL requires a bias voltage of 5V ± 10% on the VCC pin, and a bias current of 10mA ± 10% on the IBIAS pin. Ensure that the bias voltage and current are stable and within the recommended range for optimal performance.
  • The maximum allowable power dissipation for the RBQ15BM65AFHTL is 1.5W. Exceeding this limit can cause the device to overheat, leading to reduced performance or even damage.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to prevent damage from electrostatic discharge. Ensure that the ESD protection devices are rated for the maximum voltage and current of the application.
  • ROHM recommends storing the RBQ15BM65AFHTL in a dry, cool place with a temperature range of -20°C to 40°C and humidity below 60%. Avoid storing the device in direct sunlight or near heat sources.

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RBQ15BM65AFHTL Overview

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