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RBR1MM30ATFTR - ROHM Semiconductor

Description: Low V<sub>F</sub>, 30V, 1A, SOD-123FL, Schottky Barrier Diode for Automotive

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RBR1MM30ATFTR - ROHM Semiconductor PCB footprint - Other - Other - RBR1MM30ATFTR-2
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RBR1MM30ATFTR Details

  • Manufacturer Part Number:

    RBR1MM30ATFTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-109B, SOD-123FL, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.48 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, EMBOSSED, 7 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    50 µA

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

RBR1MM30ATFTR Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for RBR1MM30ATFTR is -40°C to 125°C.
  • To ensure reliability, it's recommended to derate the power dissipation of RBR1MM30ATFTR according to the ambient temperature, and to use a suitable thermal management system to keep the junction temperature below 150°C.
  • The maximum allowable power dissipation for RBR1MM30ATFTR is 1W, but it can be derated based on the ambient temperature and thermal resistance of the system.
  • To handle the ESD sensitivity of RBR1MM30ATFTR, it's recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and to ensure that the device is stored in an ESD-protected environment.
  • The recommended storage condition for RBR1MM30ATFTR is in a dry, cool place, away from direct sunlight, with a relative humidity of 60% or less, and at a temperature range of 5°C to 30°C.

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RBR1MM30ATFTR Overview

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Part Image RBR1MM30ATF ROHM Semiconductor

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon