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RBR20BM30AFHTL - ROHM Semiconductor

Description: Low V<sub>F</sub>, 30V, 20A, TO-252 (DPAK), Schottky Barrier Diode for Automotive

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RBR20BM30AFHTL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RBR20BM30AFHTL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RBR20BM30AFHTL Details

  • Manufacturer Part Number:

    RBR20BM30AFHTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.32

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.51 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    300 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RBR20BM30AFHTL Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation, ROHM recommends derating the power dissipation according to the temperature derating curve in the datasheet. Additionally, ensure good thermal design, and consider using a heat sink or thermal interface material if necessary.
  • The maximum allowable voltage for the gate-source and gate-drain pins is ±20V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, the RBR20BM30AFHTL is suitable for high-frequency switching applications. However, ensure that the device is properly driven, and the PCB layout is optimized to minimize parasitic inductance and capacitance.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect the device from electrostatic discharge. Additionally, follow proper handling and storage procedures to prevent ESD damage.

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RBR20BM30AFHTL Overview

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