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RBR30NS60AFHTL - ROHM Semiconductor

Description: Low V<sub>F</sub>, 60V, 30A, TO-263S (D2PAK), Schottky Barrier Diode for Automotive

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RBR30NS60AFHTL - ROHM Semiconductor - PCB symbol
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PCB Footprints
RBR30NS60AFHTL - ROHM Semiconductor PCB footprint - Other - Other - LPTS_Master
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RBR30NS60AFHTL - ROHM Semiconductor - 3D model - Other - LPTS_Master
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RBR30NS60AFHTL Details

  • Manufacturer Part Number:

    RBR30NS60AFHTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-83, TO-263S, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.38

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.67 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    60 V

  • Reverse Current-Max:

    600 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RBR30NS60AFHTL Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and consider the maximum junction temperature (Tj) of 150°C.
  • The maximum allowed voltage for the gate-source (Vgs) is ±20V, and for the gate-drain (Vgd) it's ±30V. Exceeding these values may damage the device.
  • Yes, the RBR30NS60AFHTL is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling.
  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is between 10Ω to 100Ω. It's essential to consider the gate charge and switching characteristics when selecting the gate resistor value.

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RBR30NS60AFHTL Overview

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