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RCX051N25 - ROHM Semiconductor

Description: 10V Drive Nch Power MOSFET

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PCB Footprints
RCX051N25 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FM(H=4.8mm)
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3D Models
RCX051N25 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220FM(H=4.8mm)
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RCX051N25 Details

  • Manufacturer Part Number:

    RCX051N25

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220FM, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1.82 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RCX051N25 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the MOSFET close to the heat sink, using a large copper area for heat dissipation, and minimizing thermal resistance between the MOSFET and heat sink. A 2-oz copper thickness and a thermal via array can help reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to consider the MOSFET's junction temperature (Tj) rating, which is 150°C for the RCX051N25. Ensure that the device is properly heat-sinked, and the ambient temperature is within the recommended operating range. Also, consider derating the device's power handling capabilities at higher temperatures.
  • The high dv/dt rating of the RCX051N25 (50 V/ns) requires careful consideration of the circuit's layout and design to minimize parasitic inductances and capacitances. This includes using short, wide PCB traces, and placing the MOSFET close to the driver circuitry. Additionally, consider using a gate resistor to slow down the gate voltage rise time and reduce electromagnetic interference (EMI).
  • When selecting a gate driver for the RCX051N25, consider the driver's output current capability, rise and fall times, and voltage rating. The gate driver should be able to provide a peak current of at least 1 A to ensure reliable switching. Also, ensure that the driver's output voltage is within the MOSFET's gate-source voltage rating (±20 V).
  • The RCX051N25 has an ESD rating of 2 kV (Human Body Model) and 150 V (Machine Model). To ensure ESD protection, handle the device by the body or use an anti-static wrist strap. During PCB assembly, use an ESD-safe environment, and consider adding ESD protection devices, such as TVS diodes, to the circuit.

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RCX051N25 Overview

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