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RCX120N25 - ROHM Semiconductor

Description: 10V Drive Nch MOSFET

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PCB Footprints
RCX120N25 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FM_2022
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3D Models
RCX120N25 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220FM_2022
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RCX120N25 Details

  • Manufacturer Part Number:

    RCX120N25

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220FM, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    10.5 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.235 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RCX120N25 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the RCX120N25 is not explicitly stated in the datasheet. However, ROHM provides an SOA graph in the datasheet, which shows the maximum allowable voltage and current combinations. Engineers can use this graph to determine the safe operating area for their specific application.
  • The junction-to-case thermal resistance (RθJC) is not directly provided in the datasheet. However, the datasheet provides the thermal resistance from junction to ambient (RθJA) and the thermal resistance from case to ambient (RθCA). Engineers can calculate RθJC by subtracting RθCA from RθJA.
  • The recommended gate drive voltage for the RCX120N25 is not explicitly stated in the datasheet. However, a general rule of thumb is to use a gate drive voltage between 5V to 10V to ensure proper switching and minimize power losses.
  • Yes, the RCX120N25 is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, engineers should ensure that the device is properly driven and that the PCB layout is optimized to minimize parasitic inductance and capacitance.
  • The RCX120N25 has a high peak current capability, which requires careful consideration of the PCB layout, thermal management, and overcurrent protection. Engineers should ensure that the device is properly heatsinked, and that the PCB traces and components can handle the high peak currents.

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RCX120N25 Overview

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